Publication:
Gallium-Induced Perturbation of Zinc Selenide Quantum Dots Electronics

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dc.contributor.authorNdangili, Peter M.
dc.contributor.authorMasikini, Milua
dc.contributor.authorFeleni, Usisipho
dc.contributor.authorDouman, Samantha
dc.contributor.authorTovide, Oluwakemi
dc.contributor.authorWilliams, Avril
dc.contributor.authorBaker, Priscilla
dc.contributor.authorIwuoha, Emmanuel I.
dc.date.accessioned2024-07-03T08:18:23Z
dc.date.issued2017
dc.description.abstractA rare cationic chemistry of GaIII has been used to modulate the optical and electrochemical properties of selenide quantum dots. Three different types of 3-mercaptopropionic acid (3MPA)-capped quantum dots (ZnSe-3MPA, Ga2Se3-3MPA and Ga-doped ZnSe-3MPA) were synthesized in highly basic aqueous media (pH = 12.12) at room temperature. Three-dimensional emission-excitation matrix spectra (3D EEM), as well as, the ultraviolet visible spectroscopic bands of the Ga-doped ZnSe-3MPA were similar to the average values obtained for ZnSe-3MPA and Ga2Se3-3MPA. Electrochemical studies revealed that gallium-induced vacancies caused a significant enhancement in the conductivity of the Ga-doped ZnSe-3MPA compared to the conductivity of a mixture of ZnSe-3MPA and Ga2Se3-3MPA.
dc.description.sponsorshipNACOSTI
dc.identifier.citationNdangili, P. M., Masikini, M., Feleni, U., Douman, S., Tovide, O., Williams, A., ... & Iwuoha, E. I. (2017). Gallium‐Induced Perturbation of Zinc Selenide Quantum Dots Electronics. ChemistrySelect, 2(24), 7054-7062.
dc.identifier.issn2365-6549
dc.identifier.urihttps://chemistry-europe.onlinelibrary.wiley.com/doi/epdf/10.1002/slct.201700748
dc.identifier.urihttps://repository.nrf.go.ke/handle/123456789/1086
dc.language.isoen
dc.publisherwiley publishers
dc.subjectGallium-Induced
dc.subjectQuantum
dc.titleGallium-Induced Perturbation of Zinc Selenide Quantum Dots Electronics
dc.typeArticle
dspace.entity.typePublication

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