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Gallium-Induced Perturbation of Zinc Selenide Quantum Dots Electronics

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Date

2017

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NACOSTI

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wiley publishers

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Ndangili, P. M., Masikini, M., Feleni, U., Douman, S., Tovide, O., Williams, A., Baker, P., & Iwuoha, E. I. (2017). Gallium-Induced Perturbation of Zinc Selenide Quantum Dots Electronics. Wiley Publishers. https://repository.nrf.go.ke/handle/123456789/1086

Abstract

A rare cationic chemistry of GaIII has been used to modulate the optical and electrochemical properties of selenide quantum dots. Three different types of 3-mercaptopropionic acid (3MPA)-capped quantum dots (ZnSe-3MPA, Ga2Se3-3MPA and Ga-doped ZnSe-3MPA) were synthesized in highly basic aqueous media (pH = 12.12) at room temperature. Three-dimensional emission-excitation matrix spectra (3D EEM), as well as, the ultraviolet visible spectroscopic bands of the Ga-doped ZnSe-3MPA were similar to the average values obtained for ZnSe-3MPA and Ga2Se3-3MPA. Electrochemical studies revealed that gallium-induced vacancies caused a significant enhancement in the conductivity of the Ga-doped ZnSe-3MPA compared to the conductivity of a mixture of ZnSe-3MPA and Ga2Se3-3MPA.

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Gallium-Induced, Quantum

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https://chemistry-europe.onlinelibrary.wiley.com/doi/epdf/10.1002/slct.201700748
 https://repository.nrf.go.ke/handle/123456789/1086

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